Abstract
We have fabricated quantum dots by locally straining ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16--20 meV are observed when the quantum well is placed at the depth of 1--10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.
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