Abstract
An InGaAs/InP surface quantum well has been used as a very effective probe of surface states before and after room-temperature low-energy ion-gun hydrogenation. We found that the luminescence efficiency from the surface quantum well (QW) does not improve for ion exposures less than 1015 ions/cm2. Above this value, the luminescence efficiency increases monotonically, up to two orders of magnitude at the ion exposure of 1017 ions/cm2. The luminescence efficiency for samples hydrogenated with exposures of 1015 and 1016 ions/cm2 degraded slightly after two months in ambient air; however, a further enhancement of luminescence efficiency by ∼20% was observed for samples hydrogenated with an exposure of 1017 ions/cm2.
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