Year-end Sale % OFF 
Abstract
Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
