Abstract
Europium doped yttrium vanadate (YVO 4 :Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of YVO 4 :Eu films at post annealing temperature in the range of 550 °C-1150 °C indicating that films were preferentially (200) oriented at post annealing temperature above 950 °C. Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from 5 D 1 level of Eu 3 + show the great concentration dependency, which can be used as a good parameter to control the composition of YVO 4 :Eu thin film.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
