Abstract

Polycrystalline Gd5Si3O12N: RE (RE = Pr, Sm, Eu, Tb and Dy) phosphors have been synthesized via a solid-state reaction method at high temperature, and their photoluminescence properties were studied. The absorption peak at about 230 nm is attributed to the host absorption. For the Pr3+-doped sample, the typical excitation lines located at 273 nm originating from the 8S7/2 → 6IJ (J = 5/2, 7/2) transitions of the Gd3+ ions were observed in the excitation spectra. Upon excitation at 227 nm UV light, the 4f15d → 4f2 emission band (350–450 nm) and typical 4f2 → 4f2 emission lines (450–700 nm) assigned to Pr3+ were observed. The Sm3+-doped sample exhibits a bright red emission owing to the 4G5/2 → 6HJ (J = 5/2, 7/2 and 9/2) transitions. However, the charge transfer band of Sm3+ was not observed in the excitation spectrum. There is a broad band from 200 to 350 nm originating from the charge transfer transition (CT) of the Eu3+ (O2−/N3− → Eu3+) in the excitation spectra, and the strongest peak in the emission spectra located at 615 nm is due to the electric-dipole 5D0 → 7F2 transition of Eu3+. For the Tb3+-doped sample, it shows 5D3 →7FJ (J = 5, 4, 3, 2) blue line emissions and 5D4 → 7FJ (J = 6, 5, 4, 3) green line emissions under the excitation of Tb3+. The Dy3+-activated sample upon excitation at 349 and 386 nm UV light shows blue-green and orange-red emission lines originating from 4F9/2 → 6HJ (J = 15/2, 13/2) transitions. In addition, the energy transfer from the host lattice to the luminescence activators (i.e. Pr3+, Sm3+, Eu3+, Tb3+, Dy3+) has been confirmed. In addition, the energy level diagram including the 4f and 5d energy levels of all Ln2+ and Ln3+ ions relative to the valence and conduction band of Gd5Si3O12N were constructed and discussed.

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