Abstract
Mo co-doped Y0.8Gd2.2(Al5-xGax)O12:Ce (x = 2.6 and 3) multicomponent garnet crystals were grown by the micro-pulling down method and the luminescence and scintillation properties were investigated. The temperature dependences of radioluminescence yield and photoluminescence decay time were measured to investigate the temperature stability of these crystals. Under excitation with 662 keV γ rays at room temperature, Y0.8Gd2.2(Al2.4Ga2.6)O12:Ce,Mo shows a higher light yield of 53,800 ph/MeV whereas Y0.8Gd2.2(Al2Ga3)O12:Ce,Mo shows a faster scintillation decay times of 50 ns (56%) + 275 ns (44%). A decrease of radioluminescence yield at low temperature observed in correlation with an appearance of the large thermoluminescence peaks can be attributed to the localization of charge carriers at shallow traps.
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