Abstract
The photochemical formation of XeF in Ar crystals is studied. Lasing on the C( 3 2 ) → A 2п, B( 1 2 ) → X 2Ω 1 and D( 1 2 ) → X 2Ω + transition is reported. High gain values up to 40 cm −4 are attainable in the medium and saturate by amplified spontaneous emission (ASE). Strong ASE laser radiation characterized by about 10% quantum efficiency and by low divergence output (10–20 mrad) is observed
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