Abstract
We report quantum efficiency measurements of back-illuminated, ion-implanted, laser- annealed charge coupled devices (CCDs) in the wavelength range 13 - 10,000 angstroms. The equivalent quantum efficiency (EQE equals equivalent photons detected per incident photon) range from a minimum of 5% at 1216 angstroms to a maximum of 87% at 135 angstroms. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that it can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes.
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