Abstract
Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) experiments were performed to study growth modes induced by hyperthermal Ge<sup>+</sup> ion action during molecular beam epitaxy (MBE) of Ge on Si(100). The continuous and pulsed ion beams were used. These studies have shown that ion-beam action during heteroepitaxy leads to decrease in critical film thickness for transition from two-dimensional (2D) to three-dimensional (3D) growth modes, enhancement of 3D island density and narrowing of island size distribution, as compared with conventional MBE experiments. Moreover, it was found that ion beam assists the transition from <i>hut</i> to <i>dome</i> shaped Ge islands on Si(100).
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