Abstract
In the present work, the matter of stabilization of silicon conductivity versus temperature is discussed for neutron transmutation doped FZ silicon with point radiation defects. It is shown that divacancies introduced by electron irradiation decrease the room-temperature conductivity of the material, making the resistance simultaneously more stable to temperature variations in the temperature range 20 to 160°C. The discrepancy between experimental and simulated data was evaluated and corrected assuming the presence of a deep-level center with energy E<sub>c</sub>-0.6 eV in the forbidden gap. As a result of the study, power resistors have been manufactured exhibiting less than 10-% variation of their resistance from nominal value in the indicated temperature range.
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