Abstract
Calculation has been carried out on the responsivity of an AlxGa1-xN(n)-GaN(p) photodiode ultraviolet detector in which the AlxGa1-xN layer has an energy band-gap grading. The analytical solution to the 1D continuity equation was used in the calculations. The spatial dependence of the material properties, such as the absorption coefficient and the energy band-gap of the photodiode n-type laser was included in the solution. The effect of the n-type front layer thickness of the energy band-gap graded photodiodes on the responsivity was analyzed and compared to that of the ungraded photodiodes. Compared to the ungraded photodiodes an enhanced current responsivity was found along with a greatly reduced dependence on the graded layer thickness and on surface recombination rate.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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