<title>Series of AZ-compatible negative photoresists</title>

Abstract

A series of AZ-compatible negative photoresists composed of a novolak resin and azide sensitizers for the micro and nano-lithography is presented. The ma-N 2400 and ma-N 300 are sensitive to light of the deep UV region (248 nm, 254 nm, 308 nm), the ma-N 400 and ma-N 1400 are sensitive to light of the mid UV region, the latter has a high sensitivity to the i-line (365 nm). The thickness of the resist layers prepared by spin coating is up to 8 micrometers depending on the composition of the resist solution. All resists are non-swelling during aqueous alkaline development after exposure. Using special lithography, these photoresists have a resolution capability up to 0.1 micrometers . The resistance to wet etch solutions and to dry etch gases is superior and higher than that of the most positive resists based on novolak.