<title>Relaxation processes and structure of electric double layers at the liquid crystal-solid substrate interface</title>

Abstract

Analyzing the low and infralow frequent dispersion component of complex dielectric permittivity (epsilon) ' and (epsilon) ', the possibility of evaluation of parameters of liquid crystal-solid substrate interface is shown. For the planar oriented liquid crystal at least two regions of (epsilon) ' and (epsilon) ' were found. First the low frequent region of dispersion is defined by redistribution of ion between volume and interface and by formation of the double electric layer the thickness of which is described by Debye equation with a one dielectric relaxation time, the value of which is tens ms and strongly depends on the thickness of the liquid crystal layer. Second, the low frequency region of dispersion (epsilon) ' and (epsilon) ' is defined by transit ions processes between electrode and interface. The setting of the permanent process for transit ions is described by Debye equation with symmetric distribution of relaxation time, the value of which is tens s and does not depend on thickness of liquid crystal layer.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.