<title>Preparation and photoluminescence character of size distribution optimized silicon-based nanometer material</title>

Abstract

The uniform size distribution of nanometer materials is the crucial problem to achieve the high efficiency luminescence of silicon-based nanometer materials, but the nonuniform distribution of nanometer materials is the common problem in the preparation of silicon-based nanometer material. Using baffle and backscattering methods in the pulsed laser ablation (PLA), the nanometer silicon material with uniform size distribution was prepared. Big particles formed during the high energy pulsed laser ablation were well controlled. They were broken through collisions with the baffle, or deposited directly on the baffle. Using backscattered particles which are small atomic clusters, nanometer material is synthesized. It is smaller and more uniform in size distribution than conventional PLA. The photoluminescence (PL) characteristics of the material are improved than conventional PLA with higher intensity and narrower full width at half maximum (FWHM). The narrower full width at half maximum of the PL shows that the size distribution of the material is uniform. Otherwise the width would become wider because of the nonuniform size distribution. The unmoved PL peak of different areas on the material also shows the uniform size distribution. The blue shift of the PL peak from red wavelength to violet wavelength shows that the size of the material is smaller than nanometer materials deposited by conventional PLA. The size distribution optimized silicon-based nanometer material with improved PL characteristics, such as high intensity, narrow FWHM, would promote the realization of the full-silicon optoelectronic integration.