Abstract
Photoexcitation and recombination of nonequilibrium charge carriers in both natural gemstone diamonds and CVD (chemical vapor deposition) polycrystalline diamond films in UV spectrum regions have been investigated. Transient picosecond photoconductivity technique applied permitted to conduct measurements with the time resolution better than 200 picoseconds and to register a charge carrier concentration value as low as 10<SUP>20</SUP> - 10<SUP>13</SUP> cm<SUP>-3</SUP>. The dependencies of photocurrent amplitude as a function of incident laser radiation intensity in the range from 10<SUP>3</SUP> to 10<SUP>10</SUP> W/cm<SUP>2</SUP> have been obtained. Charge carrier lifetimes had been measured and charge carrier drift mobility were estimated. It is shown that the electronic properties of high quality thick CVD diamond films are comparable to those of the most perfect natural type IIa crystals. Investigation of Raman and luminescence spectra of diamonds have been performed along with scanning electron microscopy studies to characterize bulk and surface structure of tested specimens.
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