<title>Photoluminescence Characterization Of Thermally-Induced Defects In Czochralski-Grown Si Wafers</title>

Abstract

We report the application of photoluminescence to the characterization of defects induced by thermal annealing at low temperatures around 500 °C, which is very important in the fabrication processes of LSI. In annealed CZ-Si wafers with the high content of oxygen, twiddle 10 18 cm -3, new broad luminescence bands have been observed together with the usual bound -V exciton luminescence lines of dopant impurity. Analysis of Hall-effect data has shown that the intensity of such broad luminescence bands correlates with the density of the so-called thermally induced oxygen donor. The broad luminescence bands in annealed CZ-Si are strongly influenced by the presence of carbon. In photoluminescence spectra of annealed CZ-Si containing a high concentration of carbon, %lx1017 cm -3, many sharp luminescence lines have been found, whose energy positions and temperature behaviors are quite different from those of the usual bound-exciton luminescence lines. Thermal behaviors of these lines indicate that such sharp luminescence lines might be originated from isoelectronic traps possibly related to carbon and oxygen. Furthermore, photoluminescence measurements have shown that these sharp luminescence lines and broad luminescence bands coexist for annealed CZ-Si wafers with the moderate contents of oxygen and carbon. Thus it has been found that the photoluminescence technique is very useful for characterizing thermally induced defects in CZ-Si wafers commonly used in LSI.© (1981) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.