Abstract
The nature of the 1/<i>f</i> noise in GaN/GaAlN Heterostructure Field Effect Transistors (HFETs) has been discussed. New experimental results on the 1/<i>f</i> noise in GaN/GaAlN HFETs and different models on the flicker noise have been also described. It has been demonstrated that the 1/<i>f</i> noise in GaN/GaAlN HFETs might be linked to the electron tunneling from the 2D gas into the tail states in GaN or AlGaN layers.
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