Abstract
ABSTRACT Intense optically stimulated luminescence (OSL) with a peak at about 420 nm is observed in ultraviolet(UV)-ray or X-ray irradiated europium-doped potassiumchloride (KC1:Eu) crystals. The OSL inytensity is increased with increasing UV—ray or X—ray irradiation dose. This suggests that KC1:Eu crystal is useful as a material for two-dimensional UV-ray or X-ray Imaging sensor utilizing OSL phenomenon. The results obtained are consistent with the proposed emission mechanisms of the L2O nm OSL peak, based on the recombination of electrons released from the F centers with Eu3' ions. The excitation mechanism for the OSL in UV-ray irradiated KC1:Eu crystals is also discussed. 1. INTRODUCTIONThe OSL phenomenon is based on the presence of electron and/or hole traps and luminescence centers in storage phosphor materials. During exposure toelectromagnetic waves such as ultraviolet(UV)-ray and X-ray, the traps are occupied with charged carriers such as electrons and holes that are created by UV—
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