Abstract
Optically detected carrier dynamics in III/V semiconductor quantum well (QW) heterostructures perpendicular to the interfaces is studied. Photoluminescence emission originating form different semiconductor layers are recorded time-resolved to probe the carrier dynamics between these layers. High spatial and temporal resolution is obtained experimentally, partly even in the nm and sub-ps ranges, respectively. Using several specially tailored semiconductor heterostructures enable the following individual dynamic effects to be studied and separated: transport in extended unquantized layers, capture into the QWs, relaxation in the QWs, tunneling between the QWs and thermal re-emission from the QWs. These basic physical effects have to be studied and understood to design and implement modern high-speed semiconductor laser devices. AlGaInAs and GaInAsP heterostructures are compared with respect to interwell transfer efficiencies and problems in technological implementation. This paper proceeds from basic research to applications in high-speed laser devices.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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