Abstract
We studied the optical properties of a type-II (GaAs)6/(GaP)6 strained layer superlattice grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs substrate. The evolution of the photoluminescence peaks as a function of the temperature and excitation power as well as the photoluminescence excitation spectra supported the assignment of the transition involved. For (GaAs)6/(GaP)6, the lowest conduction band is the X level in GaP layers. The energy distance between the X level in GaP layers and the (Gamma) level in GaAs layers is approximately 44 meV. This sample is spatially indirect (type-II) superlattice. We found that the temperature dependence of the photoluminescence spectra is different from other's results.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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