Abstract
Modifications of structural, electrical and recombinational properties of CdTe under nanosecond pulse of ruby laser were studied by techniques of second harmonic generation, time resolved reflectivity, photoreflectance and photoluminescence. The threshold energy density necessary for surface melting Wm equals 40 +/- 5 mJ/cm2 was determined. Changes in linear reflection coefficient indicate intensive evaporation of the components at W > 90 mJ/cm2. Laser induced defect formation was registered after treatment with W > Wm. Apart from defect formation, the process of their annealing was detected in narrow area of energy near the melting threshold.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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