Abstract
Pseudomorphic strained-layer Al<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>y</sub>Ga<sub>1-y</sub>As/GaAs heterostructures have been studied by means of photoluminescence (PL) and Raman scattering. It is established the correlation between the PL line shape changes and the Raman spectra modification when the QW width is below the critical layer thickness (CLT) estimated to be of 25 nm for <i>y</i> = 0.1. The PL feature observed for the InGaAs QW width equal to 20 nm as extremely narrow exciton-like peak with the FWHM equal 1.5 meV at low temperature (<i>T</i> = 6K) transforms into broad band of the FWHM equal 16 meV when the QW width reaches the value about of 12 nm. The PL line shape broadening is accompanied by the modifications of Raman spectra. A new line arising at the spectral position <i>v</i> = 160 cm<sup>-1</sup> is assigned to impurity-induced longitudinal acoustic optical mode of In<sub>y</sub>Ga<sub>1-y</sub>As. The changes observed in optical spectra are related to generation of defects in the under-CLT region.
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