Abstract

A detail study of both the optical and electrical low- frequency noise spectra and their correlation factor of graded-index separate-confinement-heterostructure, multiple quantum well strained-layer Fabri-Perot and distributed- feedback InGaAsP/InP laser diodes has been carried out under the wide current and temperature ranges. A particular attention was concentrated to the investigation of optical and electrical fluctuations due to the mode hopping effect, which was observed at specific forward currents and temperatures. Both electrical and optical noises at mode hopping areas have the Lorentzian type spectrum, and are very strongly correlated and very sensitive to temperature and facet reflectivity.

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