&lt;title&gt;Novel multiple lateral polysilicon p&lt;formula&gt;&lt;sup&gt;&lt;roman&gt;+&lt;/roman&gt;&lt;/sup&gt;&lt;/formula&gt;-n-n&lt;formula&gt;&lt;sup&gt;&lt;roman&gt;+&lt;/roman&gt;&lt;/sup&gt;&lt;/formula&gt; and p&lt;formula&gt;&lt;sup&gt;&lt;roman&gt;+&lt;/roman&gt;&lt;/sup&gt;&lt;/formula&gt;-p-n&lt;formula&gt;&lt;sup&gt;&lt;roman&gt;+&lt;/roman&gt;&lt;/sup&gt;&lt;/formula&gt; diodes&lt;/title&gt;

Sooraj V Karnik,William Bruce, Jr,Miltiadis K Hatalis,Susan Alexander

doi:10.1117/12.424865

<title>Novel multiple lateral polysilicon p<formula><roman>+</roman></formula>-n-n<formula><roman>+</roman></formula> and p<formula><roman>+</roman></formula>-p-n<formula><roman>+</roman></formula> diodes</title>

Sooraj V Karnik, William Bruce, Jr + Show 2 more

https://doi.org/10.1117/12.424865

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Publication Date: Apr 30, 2001

Citations: 1

Affiliation: Lehigh University

#Diodes In Series #Reverse Current + Show 8 more

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Abstract

Lateral polysilicon p+-n-n+ and p+-p- n+ diodes in a series combination of 2 to 5 were fabricated and their electronic properties such as ON- resistance, reverse current and ideality factor were studied. Since the multiple diodes are in series with each other, they have a reduced reverse current. Such a series combination can be used as a single device in applications such as x-ray sensing arrays, which need switching devices with reverse current lower than 1 by 10-12 A and forward current more than 1 by 10-6 A. The ON- resistance and the ideality facto increase linearly with the number of diodes in series. This behavior is attributed to the effect of series combination of diodes.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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