<title>Novel large-coupled optical cavity semiconductor lasers and multiactive region light-emitting diodes with high performance</title>

Abstract

Novel multi-active region semiconductor lasers with large coupled optical cavity and high quantum efficiency, and new mechanism tunneling-regenerated multi-active region light emitting diodes with high quantum efficiency and high brightness have been proposed and fabricated. The external and differential quantum efficiency are 2.9 and 3.0 W/A, and the output light power as high as approximately 5 W when the injecting current equals 2A for the four active region 980 nm strained InGaAs/GaAs QW lasers. The fundamental mode light output with perpendicular angle <EQ 17 degrees for this type of large coupled optical cavity laser has been achieved. The on-axis luminous intensity of the new mechanism 620 nm AlGaInP/AlInP LEDs with two active regions is more than 5 cd. It was theoretically and experimentally resulted in that the electro-luminescence efficiency and the on-axis luminous intensity are linearly increasing approximately with the number of the active regions.