Abstract

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO<SUB>3</SUB>) and tungsten (V) oxide (W<SUB>2</SUB>O<SUB>5</SUB>) on the hypotenuse of glass (BK-7), fused silica (SiO<SUB>2</SUB>) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.

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