Abstract
The series of GaAs and SiO<sub>2</sub> samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve of X-ray total external reflection. The direct and inverse problems were solved, taking into consideration data obtained by the method of atomic-force microscopy. The theoretical curves of total external reflection are calculated and the parameters describing a surface relief of the samples are restored. The fractal approach for describing of the shape of differential curves and surface profiles was used.
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