<title>Laser-assisted epitaxy of III-V compounds</title>

Abstract

Laser-assisted epitaxial growth of III-V semiconductors has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon laser operating at 514.5 nm was used to 'direct-write' epitaxial microstructures using the pyrolytic process, whereas an excimer laser was utilized to examine the photolytic process. Dependence of the film properties on the laser parameters is investigated. This discussion is limited to homo- and heteroepitaxy of GaP.