Abstract
A systematic study in the growth of InxGa1-xAsyP1-y (0.53 < x < 1, 0 < y < 1) compound semiconductor and it's application to laser diode structure has been carried out by the low-pressure organometallic vapor phase epitaxy (LP- OMVPE) technique. The indium (In), gallium (Ga), arsenic (As) and phosphorus (P) incorporation efficiencies were studied by varying the flow-rate of source gases. At the optimized growth conditions, the In incorporation efficiency has been found about 0.7 as compared with Ga's in both In.53Ga.47As and InGaAsP epilayers, and the Ga composition can be adjusted simply by varying the trimethylgallium (TMG) flow-rate linearly. However, the P incorporation efficiency is found much lower than the A's. Furthermore, we found that the As composition in InxGa1-xAsyP1-y quaternary epilayer (Q layer) is determined by arsine (AsH3) flow-rate not by the AsH3/PH3 flow-rate ratio in gas phase. The hydride flow-rates concerning in experimental growth of Q layer has been explained by the proposed As/P competition model and then formulated. According to this model, the AsH3 flow-rate is found proportional to y2.24259(1-y)-0.27138. For the final purpose, the graded index- separate confinement heterostructure (GRIN-SCH) and quantum wells (QW) for laser diode structure have been grown and demonstrated.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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