Abstract

The aim of this work was to investigate the growth mechanism of Y<SUB>1</SUB>Ba<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-(delta</SUB> ) thin films prepared by KrF and XeCl excimer laser ablation on different substrate. To investigate the film's properties - morphology, epitaxy, c-axis length and critical temperature (T<SUB>c</SUB>) - we varied the process parameters - oxygen partial pressure, substrate temperature and laser energy density. The films were analyzed by (Theta) -2(Theta) XRD, (phi) -scan XRD, optical microscopy, AFM, prophilometry and electric measurements.

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