Abstract

Method of the modeling of the density of charged states in the band gap of amorphous semiconductor was developed. Modeling procedure including of the fitting of different experimental dependencies of the photoconductivity with using of the same DOS model was developed. These method and procedure were applied to the a-SiGe:H films fabricated by LF (55 kHz) PECVD. The densities of charged states in the band gap of amorphous semiconductor were estimated and redistribution processes were analyzed. It was shown that deterioration of the optoelectronic properties of a-SiGe:H alloys with the increase of the germanium content is connected with the increase of recombination centers due to the N<sub>d</sub><sup>+</sup> charged localized states. The fraction of these states appreciably increases with the increase of germanium content in the alloy.

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