Abstract
Hot carrier dynamics and related optical nonlinearities, which arise in dc-biased GaAs under spatially varying optical illumination, have been investigated using light diffraction on transient grating technique. Under dc-bias, time resolved four-wave mixing measurements had evidenced an oscillatory behavior and increased efficiency of light diffraction. The effect was found the largest at illumination intensity corresponding to the electron density between 10<sup>15</sup> cm<sup>-3</sup> and 10<sup>16</sup> cm<sup>-3</sup>. Numerical modeling of nonlinear transport at various applied dc-voltages and photoexcitation levels revealed conditions for an efficient and fast refractive index modulation by a transient high-field domain grating. Experimental obervations have been explained in terms of nonuniform carrier heating and formation of transient Gunn-domain grating in the region of negative differential resistance. Our results open the possibility of measuring hot-carrier picosecond dynamics and predict a novel way of fast refractive index modulation in dc-biased compound semiconductors.
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