Abstract
Heterostructure with In<sub>x</sub>Ga<sub>1-x</sub>As quantum dots on Si (001) substrate was grown by molecular beam epitaxy (MBE). Step graded Si-Si<sub>1-x</sub>Ge<sub>x</sub>-Ge buffer layers and In<sub>x</sub>Ga<sub>1-x</sub>As quantum dots (QDs) in GaAs matrix were deposited consecutively in two different MBE systems. Optical and structural characterizations of heterostructure were performed by photoluminescence (PL) at 77K and 300 K and transmission electron microscopy (TEM), respectively. Si-Si<sub>1-x</sub>Ge<sub>x</sub>-GaAs heterostructure with InGaAs QDs exhibited intense photoluminescence in range 1.3 μm at room temperature.
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