Abstract

In this paper, the general formula was found for one- dimensional computation of GaAs-Ga1-xAlxAs superlattice or quantum well. The formula can be used to calculate donor binding energy in external field using the effective-mass approximation. The effect of superlattice structure and different external fields were expressed as potential energy item V vector (r) in Hamiltonian. The results were of universal significance in a certain sense and application prospects for developing new material.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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