Abstract
A new technique to determine the intrinsic performance of hydrogenated amorphous silicon thin film transistor (TFT) without any influence from source/drain series resistances is proposed. This technique is based on a-Si:H gated-four- probe (GFP) TFT structure. In this method, two probes within the channel of a conventional inverted-staggered a-Si:H TFT are used to measured the voltage difference. By correlating this voltage difference with the drain-source current induced by applied gate bias, the intrinsic performance of a-Si:H TFT, such as mobility, threshold voltage and field- effect conductance activation energy, can be accurately determined without influence from the source/drain series resistances. The a-Si:H GFP TFT and conventional a-Si:H TFT structures are also analyzed and their properties are compared by using 2D simulation based on finite element method. The influence of series resistances on a-Si:H TFT electrical performance is clearly described from the simulation results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
