Abstract
An electron-beam (EB) proximity effect correction (PEC) system for mask making has been developed, and is applied for 0.25 micrometer device reticle fabrications with a high accuracy and fast calculation speed. This system consists of three important functions: (1) fast PEC operation, (2) high speed data processing, and (3) correction verification. For the fast PEC, successive over-relaxation (SOR) method is applied for matrix calculation and a two dimensional integral table is used for convolution. In addition to this, a parallel processing method using four engineering workstations (135 MIPS each) has also been introduced. For high accuracy, a delicate pattern data fracturing and outline algorithm is developed. The data processing subsystem has various functions, such as data management, parallel-processing, data compaction, data searching, data clipping, repetitive geometry searching and critical area searching. A data verification and browser subsystem is also constructed utilizing a Sony plot intermediate format (SPIF) data interface, being named SPIF reticle image browser (SRI). In this paper, key technologies supporting each function are presented and the results applied to 0.25 micrometer rule application-specific IC (ASIC). Device reticle also is presented.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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