Abstract

Recent work has demonstrated high power, spatially coherent operation of on-the-chip unstable resonator diode lasers. The unstable resonators were fabricated in SQW-GRINSCH material using photolithography and a dry chemical etch technique. The unstable resonator design provides mode selectivity in broad area devices by suppressing higher order lateral modes. These devices demonstrated twice diffraction limited far fields with high average power and strong lateral coherence.

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