Abstract
Ce-doped yttrium iron garnet (Ce:YIG) thin films were deposited for the first time by pulsed-laser deposition (PLD) on gadolinium gallium garnet (GGG(111)) substrates. Well crystallized film was obtained at high substrate temperature (approximately 900 degree(s)C) and in low Ar gas pressure (approximately 50 mtorr). A Faraday rotation angle was wavelength dependent, and the largest value was 4.2 x 104 deg/cm at 420 nm. The control of the charge state of Ce ion is necessary for crystallization. The deposited Ce:YIG films were transferred by laser-induced forward transfer (LIFT) process to obtain a thick film.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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