Abstract
ABSTRACTDefect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy (HRPITS). A number of defect centers related to native defects andmetallic impurities were detected and the concentrations of these centers were estimated.Keywords: deep levels, semi-insulating GaAs, HRPITS. 1. INTRODUCTION Semi-insulating (SI) GaAs substrates are of great interest for microelectronic and optoelectronic devices. These substratesare usually made from the crystals grown by the Liquid Encapsulated Czochralski (LEC) method from arsenic-rich melt. The quality of these crystals is determined mainly by electronic properties of point defects introduced during crystallization. Apart from deep donor EL2 related to arsenic antisite, the effect of growth conditions on the propertiesand concentrations of other point defects so far has not been established. This is due to many factors influencing the pointdefect generation process amongst which the purity of starting materials (Ga, As), the purity of B203 encapsulant, the
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