<title>Electronic component design and testing for multielement IR arrays with CCD readout devices</title>

Abstract

P-channel silicon direct injection read-out devices with p- type buried channel CD multiplexers which consist of input circuits, shift register and output circuits were designed, fabricated and tested. Read-out devices were designed for using with IR p-n-photodiode linear arrays. The dynamical range of p-type read-out devices was estimated to be of the order of 60 dB at T equals 80 K. The two-phase p-channel CCD shift register was designed with 5 MHz clock frequency operation. Transfer efficiency without fat zero was 0.99985 at 1.0 MHz.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.