Abstract
The homogeneously broadened, linear gain model of semiconductor lasers does not predict many of the observed dynamic and spectral properties of these devices. We begin by phenomenologically introducing the simplest form of nonlinear gain compression into the single-mode rate equations and review its effect on the laser's dynamic response. A recently developed rate-equation model of quantum-well lasers is then introduced to explain how carrier transport, in conjunction with single-mode nonlinear gain, determines the intrinsic structure-dependent frequency response of quantum-well lasers. The need for a two-mode, nonlinear gain model to describe the low-frequency relative intensity noise (RIN) spectra of semiconductor lasers is briefly reviewed. Finally, recent experimental measurements of the longitudinal mode spectra and the beat spectra between adjacent modes of nearly single-mode lasers are presented. It is shown that understanding of three-mode coupling is required for a proper description of these measurements.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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