Abstract

Tuned front-end optical receivers, for use in Coherent or Subcarrier Multiplex Lightwave systems, offer significant improvements in signal to noise performance over conventional baseband receivers. To design these receivers correctly a detailed knowledge of the noise performance of short gate-length GaAs MESFETs and HEMTs is required. The intrinsic noise parameters, P, R, and C completely characterize the noise performance of such devices but closed form analytic expressions are not yet available that enable accurate determination of these parameters. Here we consider a technique that extracts the intrinsic noise parameters, P, R, and C from measured noise data. Novel analytic expressions are presented as well as results that prove the validity of the technique.

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