Abstract

We studied enhancement and suppression of spontaneous emission in thin-film InGaAs/InP photonic crystals at room temperature. Angular resolved photoluminescence measurements were used to determine experimentally the band structure of conduction band of such a photonic crystal and overall enhancement of spontaneous emission. We demonstrated spontaneous emission enhancement in thin slab photonic crystals. It was shown that emission into the leaky conduction bands of the crystal has the same effect as cavity-enhanced spontaneous emission provided these bands are flat enough relative to the emission band of the material.

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