Abstract
Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. Two types of QWIPs are considered: GaAs/A1GaAs intersubband quantum well photoconductors and type II staggered InAs/InGaSb photodiodes. In comparative studies the HgCdTe photoconductors and photodiodes, PbSnTe photodiodes, Schottky barrier photoemissive detectors and doped silicon detectors are considered. HgCdTe photodiodes indicate better performance in comparison with GaAs/A1GaAs QWIPs operated in the range 35to 77 K. The cooling requirements for GaAs/A1GaAs QWIPs with cutoff wavelengths below 10 tm are less stringent in comparison with extrinsic detectors and Schottky barrier devices. The theoretically predicted performance of long wavelength InAs/GaInSb photodiodes are comparable with HgCdTe photodiodes. Keywords: infrared photodetectors, HgCdTe photodiodes, GaAs/AlGaAs photodetectors, quantum well InAs/GaInSb photodiodes.
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