Abstract
The concept of integrated technique of thermally activated spectroscopy (TAS) of localized states (LS) in forbidden gap of semiconductors and insulators (intrinsic and impurity centers of trapping, recombination, luminescence) taking into account the interactions of the charge delocalization and transport processes in heterostructures is developed. In the widely used advanced TAS techniques (deep level transient spectroscopy -- DLTS, fractional thermally stimulated depolarization -- FTSD) the interaction of thermogeneration and trapping with transport and spatial redistribution of charge carriers (i.e., the relationship of transitions on to energetic and spatial coordinates) are considered as negligible, that results in incorrect applications of these techniques for such interesting objects as amorphous and disordered materials, thin films, and heterostructures. As shown by numerical simulations and experiments, the charge TAS realizes the high threshold sensitivity, high stability to anomalous effects of spatial charge redistribution, and may be used on all stages of relaxation process with arbitrary kinetic parameters.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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