Abstract
A number of properties of semiconductor silicon during the various stages of the device manufacturing can be measured by Fourier transform infrared spectroscopy. In this paper, the accurate determination of the interstitial oxygen concentrations including the corrections for the effect of multiple reflections in the silicon wafer will be described. Microscopic mapping of the oxygen distribution from sampling areas of 25 micrometers or less in diameter will also be described. Methods are also outlined for the accurate determination of the phosphorus and boron concentrations in phosphosilicate, borosilicate, and borophosphosilicate glasses on silicon.© (1984) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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