Abstract
The state of the art InP/InGaAs avalanche photodiodes (APDs) and the R and D status of the novel APDs are reviewed. Highly sensitive and reliable 10 Gb/s photo receivers consisted of the conventional InP/InGaAs and InGaP/GaAs heterojunction bipolar transistor ICs are very practical and are now in volume production. The novel APDs reveal high performances such as high-speed and low-noise characteristics, indicating great potential for application to the ultra high-speed transmissions toward 40 Gb/s regime. Very recent study on the strain compensated multiple quantum well APDs aimed at L-band DWDM systems applications over 1.6micrometers wavelength is also introduced.
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