Abstract
Highly efficient electrically driven avionics have led to a renewed interest in cryogenic propulsion systems with the goal of reducing carbon emission footprint. Although cryogenic converters promise better efficiency and improved power density, the successful design is incumbent upon the appropriate switching device selection and simulation-based analyses prior to initial prototyping. In this work, a datasheet-driven compact model for a gallium nitride (GaN) Gate Injection Transistor (GIT) has been proposed and implemented in LTspice, a versatile, high performance, and free circuit simulator in order to investigate the merit of the chosen device in a power electronic system.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
