Abstract
Ab initio electronic structures for β-Ge3N4are investigated using ultrasoft pseudo-potential method within the generalized gradient approximation functional. The lattice parameters are predicted theoretically, and are compared with available experimental data and the other theoretical results. The elastic constants calculations reveal that the phenacite structure is a stable phase in the pressure range of 020GPa. The high bulk modulus (B=180.2GPa) indicates that β-Ge3N4is a relatively hard material. β-Ge3N4has a direct band gap of 2.94eV, indicating its promising applications as a semiconductor in electronics and optical fibers. On the other hand, the density of states analysis is also included in this paper.* Corresponding author: CHEN Dong
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