Abstract
Cu–SiO2 and Ag–Ge30Se70 conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current–voltage ( $I$ – $V$ ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ $I$ – $V$ measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.
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